sputtering source造句

• Reactive sputtering source
  反应溅射源
• In this paper , several thin films samples of vanadium oxide were got by high - frequency magnetron sputter with pure metal vanadium as sputter source
  本文以高纯金属钒作为靶材，采用磁控溅射工艺制备氧化钒薄膜。
• According to euvl requirement , this paper also presents a multiplayer thickness distribution control method by use of a platter velocity profiling technique in which the platter revolution speed is varied as a function of its position relative to the sputtering source . the optimum velocity p
  采用此方法，笔者在pl50mm完成了均匀euv多层膜的制备，膜厚空间分布非均匀性由恒定公转速度的7减小到1 ，达到了euvl的要求。
• After 40 hour irradiation time , about 7 ci of radioactive isotope 64cu was produced via 63cu ( n , y ) 64cu reaction . after simple disposal , the irradiated copper sample was installed in the high - intesity ion sputter source on the hi - 13 tandem accelerator . then 64cu ions extracted from the high - intesity ion sputter source and injected into the tandem accelerator , 64cu ions can be accelerated to an energy of 80 mev and formed the off - line rnb since natural
  S ）的热中于通量下，经过34个半衰期辐照，通过‘ u … ， y ）生成放射性l司位素‘ cll ，然后将放射性铜靶锥注入串列加速器强流溅射离于源中，引出mcll负离于，经刁串列加速器加速而得到能量为80mcv的离线放射性核束“ cll叭。